Cost Effective T-Gate Process for PHEMT-based MMIC with Large Gate Periphery
نویسندگان
چکیده
One of the major yield killers of power-amplifier PHEMTbased MMICs is fabricating a T-shaped gate with gate periphery of several tens of mm. We have investigated a novel PMMA/PMGI/PMMA tri-layer resist scheme for T-Gate definition of PHEMTs with 0.25-μm gate length and in-situ Ar ion beam treatment before gate evaporation as methods for eliminating this problem. We intend to extend this technology for devices with shorter gate length (Lg).
منابع مشابه
Optimization of Empirical Modelling of Advanced Highly Strained In0.7Ga0.3As/In0.52Al0.48As pHEMTs for Low Noise Amplifier
Received May 19, 2017 Revised Nov 14, 2017 Accepted Nov 16, 2017 An optimized empirical modelling for a 0.25μm gate length of highly strained channel of an InP-based pseudomorphic high electron mobility transistor (pHEMT) using InGaAs–InAlAs material systems is presented. An accurate procedure for extraction is described and tested using the pHEMT measured dataset of I-V characteristics and rel...
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